The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Mar. 15, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alan B. Botula, Essex Junction, VT (US);

Dinh Dang, Essex Junction, VT (US);

James S. Dunn, Jericho, VT (US);

Alvin J. Joseph, Williston, VT (US);

Peter J. Lindgren, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
Abstract

A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.


Find Patent Forward Citations

Botula, Alan. (2014). Low harmonic rf switch in soi (U.S. Patent No. 8722508). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8722508

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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