The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jun. 28, 2012
Hanyi Ding, Essex Junction, VT (US);
Mete Erturk, Alburg, VT (US);
Robert A. Groves, Highland, NY (US);
Zhong-xiang He, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Anthony K. Stamper, Williston, VT (US);
Hanyi Ding, Essex Junction, VT (US);
Mete Erturk, Alburg, VT (US);
Robert A. Groves, Highland, NY (US);
Zhong-Xiang He, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.