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For the Inventor, By the Inventor

Walnut Creek, CA, United States of America

Perng-Fei Yuh

This inventor holds 43 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Memory. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Perng-Fei Yuh. Retrieved from https://idiyas.com/inventor/perng-fei-yuh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 43 

% Patents Active = 95.3

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 21(Granted Patents)


Location History:

  • Hsinchu, TW (2021 - 2023)
  • Walnut Creek, CA (US) (2022 - 2024)

Company Filing History:

goldMedal43 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2021-2026

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Areas of Expertise:
MRAM
FeFET Memory
High-Density Memory
Nonvolatile SRAM
Ion Beam Etching
Bias Generating Devices
Nanostructured Channels
Memory Operating Methods
Integrated Circuits
Stacking Structures
Sense Amplifiers
Metal Oxides
43 patents (USPTO):Explore Patents
1. 12749548 - Bit selection for power reduction in stacking structure during memory programming (2026-09-29),
2. 12749547 - High-density and high-voltage-tolerable pure core memory cell (2026-09-29),
3. 12542254 - Grid structures of ion beam etching (IBE) systems (2026-02-03),
4. 12513912 - Method for fabricating an integrated circuit comprising devices on opposing sides of a substrate (2025-12-30),
5. 12417796 - Ferroelectric field-effect transistor (FeFET) memory (2025-09-16),
6. 12412620 - Second word line combined with y-mux signal in high voltage memory program (2025-09-09),
7. 12389806 - MRAM cell and MRAM (2025-08-12),
8. 12387968 - Radical-activated etching of metal oxides (2025-08-12),
9. 12347505 - Memory device and operating method of the same (2025-07-01),
10. 12284804 - Memory devices, semiconductor devices, and methods of operations a memory device (2025-04-21),
11. 12254923 - Nonvolatile SRAM (2025-03-18),
12. 12243599 - Merged bit lines for high density memory array (2025-03-04),
13. 12218015 - Interferometer systems and methods for real time etch process compensation control (2025-02-04),
14. 12211918 - Nanostructured channel regions for semiconductor devices (2025-01-28),
15. 12210368 - Bias generating devices and methods for generating bias (2025-01-28),

Title: The Innovative Journey of Inventor Perng-Fei Yuh

Introduction:

Perng-Fei Yuh, a talented inventor based in Walnut Creek, CA, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Perng-Fei Yuh's latest patents include cutting-edge technologies in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights:

With a career spanning over two decades, Perng-Fei Yuh has worked with leading tech companies, research institutions, and universities, honing his skills and pushing the boundaries of what is possible in the world of innovation.

Collaborations:

Throughout his career, Perng-Fei Yuh has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence that has led to numerous successful projects and products.

Conclusion:

Inventor Perng-Fei Yuh's passion for innovation, coupled with his relentless drive to solve complex problems, has established him as a visionary in the field of technology, inspiring the next generation of inventors to push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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