The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 14, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chansyun David Yang, Shinchu, TW;
Chan-Lon Yang, Taipei, TW;
Keh-Jeng Chang, Hsinchu, TW;
Perng-Fei Yuh, Walnut Creek, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes methods and systems for radical-activated etching of a metal oxide. The system includes a chamber, a wafer holder configured to hold a wafer with a metal oxide disposed thereon, a first gas line fluidly connected to the chamber and configured to deliver a gas to the chamber, a plasma generator configured to generate a plasma from the gas, a grid system between the plasma generator and the wafer holder and configured to increase a kinetic energy of ions from the plasma, a neutralizer between the grid system and the wafer holder and configured to generate electrons and neutralize the ions to generate radicals, and a second gas line fluidly connected to the chamber and configured to deliver a precursor across the wafer. The radicals facilitate etching of the metal oxide by the precursor.