The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 12, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Perng-Fei Yuh, Walnut Creek, CA (US);
Yih Wang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 5/02 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 5/025 (2013.01); G11C 11/161 (2013.01); H10B 61/00 (2023.02);
Abstract
Magnetic random access memory (MRAM) cells are provided. MRAM cell includes a plurality of stacked magnetic tunnel junction (MTJ) devices coupled in serial and coupled between a bit line and a source line. The stacked MTJ devices have different sizes. Each of the stacked MTJ devices includes a free layer, a pinned layer and a barrier layer between the free layer and the pinned layer. The free layers of two adjacent stacked MTJ devices are in direct contact with each other.