The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Perng-Fei Yuh, Walnut Creek, CA (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/56 (2006.01); H10B 51/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/223 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 11/5657 (2013.01); H10B 51/00 (2023.02);
Abstract
A memory device includes a plurality of memory cells. Each memory cell includes a multi-gate FeFET that has a first source/drain terminal, a second source/drain terminal, and a gate with a plurality of ferroelectric layers configured such that each of the ferroelectric layers has a respective unique switching E-field.
Quick Actions:
Yuh, Perng-Fei. (2025). Ferroelectric field-effect transistor (fefet) memory (U.S. Patent No. 12417796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12417796
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile