The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Mar. 08, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Perng-Fei Yuh, Walnut Creek, CA (US);

Yoshitaka Yamauchi, Hsinchu, TW;

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); G05F 3/24 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); G05F 3/24 (2013.01);
Abstract

The present disclosure provides a bias generating device and a method for generating bias. A bias generating device includes a first diode-connected transistor pair connected to receive a first voltage; a second diode-connected transistor pair connected to receive a second voltage; and a first transistor pair connected to the first diode-connected transistor pair and the second diode-connected transistor pair. The first transistor pair is configured to generate a third voltage in response to the first voltage and the second voltage.


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