logo

For the Inventor, By the Inventor

Seveso, Italy

Paolo Giuseppe Cappelletti

This inventor holds 56 USPTO granted patents and 2 published patent applications and 10 EPO patents, primarily in Non-Volatile Memory (CPC class H01L). Top assignees: Stmicroelectronics S.r.l., Sgs-Thomson Microelectronics S.r.l., Micron Technology Incorporated. Active years: 1989-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paolo Giuseppe Cappelletti. Retrieved from https://idiyas.com/inventor/paolo-giuseppe-cappelletti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56 

% Patents Active = 92.9

 

Average Co-Inventor Count = 1.9

ph-index = 11

Forward Citations = 609(Granted Patents)

Forward Citations (Not Self Cited) = 595(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Milan, IT (1999 - 2006)
  • Seveso, IT (1989 - 2023)

Company Filing History:

goldMedal25 out of 5,691 
 
Stmicroelectronics S.r.l.
 patents
silverMedal21 out of 941 
 
Sgs-Thomson Microelectronics S.r.l.
 patents
bronzeMedal5 out of 39,222 
 
Micron Technology Incorporated
 patents
4. 3 out of 8,827 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
5. 2 out of 115 
 
Sgs Microelettronica Spa
 patents
6. 1 out of 780 
 
Stmicroelectronics (Crolles 2) Sas
 patents
7. 1 out of 728 
 
Western Digital (Fremont), Inc.
 patents
8. 2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1989-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Non-Volatile Memory
Phase-Change Memory
EEPROM
Memory Cell
Semiconductor
Floating Gate
Memory Device
Shallow Trench Isolation
Transistor Structure
Error Correction
High-Performance Logic
Charge Storage
56 patents (USPTO):Explore Patents
1. 12402328 - Switching cell with direct contact to fixed resistor element (2025-08-26),
2. 12356634 - Phase change memory (2025-07-08),
3. 12114580 - Phase-change memory cell (2024-10-08),
4. 11653579 - Phase-change memory cell (2023-05-16),
5. 11641786 - Memory device (2023-05-02),
6. 11355702 - Memory device (2022-06-07),
7. 11227992 - Memory cell (2022-01-18),
8. 10910558 - Memory device (2021-02-02),
9. 9577188 - Semiconductor constructions and methods of forming memory cells (2017-02-21),
10. 9166159 - Semiconductor constructions and methods of forming memory cells (2015-10-20),
11. 8963220 - Shallow trench isolation for a memory (2015-02-24),
12. 8664702 - Shallow trench isolation for a memory (2014-03-04),
13. 8097506 - Shallow trench isolation for a memory (2012-01-17),
14. 7560782 - Transistor structure with high input impedance and high current capability (2009-07-14),
15. 7320904 - Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit (2008-01-22),

Title: Paolo Giuseppe Cappelletti: Pioneering Innovations in Phase-Change Memory Technology

Introduction:

In the ever-evolving world of semiconductor technology, inventors like Paolo Giuseppe Cappelletti shine through their groundbreaking contributions. Based in Seveso, Italy, Cappelletti has made a name for himself with an impressive portfolio of 34 patents, primarily focused on phase-change memory cells. This article sheds light on Cappelletti's latest patents, highlights his career accomplishments, and explores his collaborations within the industry.

Latest Patents:

Paolo Giuseppe Cappelletti's most recent patents revolve around phase-change memory cells, their manufacturing, and operation. One of his notable inventions includes the "Phase-Change Memory Cell," which comprises a heater and a stack containing germanium layers or nitrogen-doped germanium layers. Additionally, the stack houses a first alloy layer composed of germanium, antimony, and tellurium. These advancements play a pivotal role in enhancing memory device performance and efficiency.

Another significant patent by Cappelletti is the "Memory Device," featuring a phase-change memory cell with a germanium layer and a first alloy layer. In a programmed state, heating certain portions of the stack leads to the formation of a second alloy with increased germanium concentration. This innovation opens doors to improved memory cell functionality and increased data storage capabilities.

Career Highlights:

Cappelletti's impressive career spans various renowned companies. His engineering prowess has greatly influenced the industry, especially through his work with STMicroelectronics and SGS-Thomson Microelectronics. While specific details of his accomplishments within these companies are not available, Cappelletti's 34 patents attest to his significant contributions in advancing phase-change memory technology.

Collaborations:

Throughout his career, Paolo Giuseppe Cappelletti has collaborated with talented individuals who have shared his passion for innovation. Noteworthy among his collaborations are Alfonso Maurelli and Gabriele Navarro. Together, they have contributed to the introduction of cutting-edge advancements in the field of phase-change memory cells. These collaborations demonstrate Cappelletti's ability to work effectively within a team, pushing the boundaries of technological possibilities.

Conclusion:

Paolo Giuseppe Cappelletti's journey as an inventor and innovator in the domain of phase-change memory cells is truly inspiring. With an impressive array of patents and collaborations, Cappelletti has made remarkable contributions to the advancement of semiconductor technology. As the industry continues to evolve, we eagerly anticipate his future endeavors and the transformative impact they will undoubtedly bring.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…