The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Feb. 03, 2021
Applicants:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Paolo Giuseppe Cappelletti, Seveso, IT;

Gabriele Navarro, Moirans, FR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 45/126 (2013.01); H01L 45/144 (2013.01); G11C 2013/008 (2013.01);
Abstract

Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.


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