The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Aug. 06, 2019
Applicants:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Paolo Giuseppe Cappelletti, Seveso, IT;

Gabriele Navarro, Moirans, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 17/10 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 17/10 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01);
Abstract

A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium. In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.


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