The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jul. 27, 2022
Applicants:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Paolo Giuseppe Cappelletti, Seveso, IT;

Fausto Piazza, Grenoble, FR;

Andrea Redaelli, Milan, IT;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02);
Abstract

A memory cell includes a substrate with a semiconductor region and an insulating region. A first insulating layer extends over the substrate. A phase change material layer rests on the first insulating layer. The memory cell further includes an interconnection network with a conductive track. A first end of a first conductive via extending through the first insulating layer is in contact with the phase change material layer and a second end of the first conductive via is in contact with the semiconductor region. A first end of a second conductive via extending through the first insulating layer is in contact with both the phase change material layer and the conductive track, and a second end of the second conductive via is in contact only with the insulating region.


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