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For the Inventor, By the Inventor

Hitachinaka, Japan

Noriyuki Kaneoka

This inventor holds 17 USPTO granted patents and 2 published patent applications. Top assignees: Hitachi-High-Technologies Corporation, Hitachi High-Tech Corporation, Hitachi, Ltd.. Active years: 1992-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noriyuki Kaneoka. Retrieved from https://idiyas.com/inventor/noriyuki-kaneoka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 76.5

Average Co-Inventor Count = 5.0

ph-index = 7

Forward Citations = 246(Granted Patents)


Location History:

  • Hachioji, JP (1996 - 2000)
  • Hitachinaka, JP (1997 - 2014)
  • Tokyo, JP (1992 - 2022)

Company Filing History:

goldMedal9 out of 2,874 
 
Hitachi-High-Technologies Corporation
 patents
silverMedal4 out of 1,386 
 
Hitachi High-Tech Corporation
 patents
bronzeMedal4 out of 42,731 
 
Hitachi, Ltd.
 patents

Years Active: 1992-2022

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17 patents (USPTO):Explore Patents
1. 11515121 - Electron beam device (2022-11-29),
2. 11193895 - Semiconductor substrate for evaluation and method using same to evaluate defect detection sensitivity of inspection device (2021-12-07),
3. 11107655 - Charged particle beam device (2021-08-31),
4. 11002687 - Defect inspection method and defect inspection device (2021-05-11),
5. 10923315 - Charged particle beam apparatus, and method of adjusting charged particle beam apparatus (2021-02-16),
6. 10522320 - Charged particle beam device and method for adjusting charged particle beam device (2019-12-31),
7. 8779400 - Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample (2014-07-15),
8. 8481980 - Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample (2013-07-09),
9. 8431891 - Dual beam apparatus with tilting sample stage (2013-04-30),
10. 7777183 - Charge particle beam system, sample processing method, and semiconductor inspection system (2010-08-17),
11. 7700931 - Ion beam processing apparatus (2010-04-20),
12. 7696496 - Apparatus for ion beam fabrication (2010-04-13),
13. 7592606 - Manufacturing equipment using ION beam or electron beam (2009-09-22),
14. 6094647 - Presearch type document search method and apparatus (2000-07-25),
15. 5659174 - Scanning electron microscope (1997-08-19),

Title: Noriyuki Kaneoka: Innovator in Electron Beam Technology

Introduction

Noriyuki Kaneoka is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of electron beam technology, holding a total of 17 patents. His work focuses on enhancing the performance and sensitivity of inspection devices used in semiconductor manufacturing.

Latest Patents

Kaneoka's latest patents include an innovative electron beam device designed to improve the clarity of photoelectron images. This device features two columns, one for irradiation and another for imaging, which work together to sharpen the images used for system adjustments. Additionally, he has developed a semiconductor substrate for evaluating defect detection sensitivity in inspection devices. This substrate allows for a quantitative assessment of defect detection rates, addressing the challenges posed by the random nature of defects in semiconductor materials.

Career Highlights

Throughout his career, Kaneoka has worked with notable companies such as Hitachi High-Technologies Corporation and Hitachi, Ltd. His expertise in electron beam technology has positioned him as a key figure in advancing inspection methodologies in the semiconductor industry.

Collaborations

Kaneoka has collaborated with esteemed colleagues, including Kaoru Umemura and Koji Ishiguro, to further enhance the capabilities of electron beam devices and inspection technologies.

Conclusion

Noriyuki Kaneoka's contributions to electron beam technology and semiconductor inspection have established him as a leading inventor in his field. His innovative patents continue to influence the industry and improve the accuracy of defect detection in semiconductor substrates.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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