Hitachinaka, Japan

Noriyuki Kaneoka

USPTO Granted Patents = 17 

Average Co-Inventor Count = 5.0

ph-index = 7

Forward Citations = 245(Granted Patents)


Location History:

  • Hachioji, JP (1996 - 2000)
  • Hitachinaka, JP (1997 - 2014)
  • Tokyo, JP (1992 - 2022)

Company Filing History:


Years Active: 1992-2022

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17 patents (USPTO):Explore Patents

Title: Noriyuki Kaneoka: Innovator in Electron Beam Technology

Introduction

Noriyuki Kaneoka is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of electron beam technology, holding a total of 17 patents. His work focuses on enhancing the performance and sensitivity of inspection devices used in semiconductor manufacturing.

Latest Patents

Kaneoka's latest patents include an innovative electron beam device designed to improve the clarity of photoelectron images. This device features two columns, one for irradiation and another for imaging, which work together to sharpen the images used for system adjustments. Additionally, he has developed a semiconductor substrate for evaluating defect detection sensitivity in inspection devices. This substrate allows for a quantitative assessment of defect detection rates, addressing the challenges posed by the random nature of defects in semiconductor materials.

Career Highlights

Throughout his career, Kaneoka has worked with notable companies such as Hitachi High-Technologies Corporation and Hitachi, Ltd. His expertise in electron beam technology has positioned him as a key figure in advancing inspection methodologies in the semiconductor industry.

Collaborations

Kaneoka has collaborated with esteemed colleagues, including Kaoru Umemura and Koji Ishiguro, to further enhance the capabilities of electron beam devices and inspection technologies.

Conclusion

Noriyuki Kaneoka's contributions to electron beam technology and semiconductor inspection have established him as a leading inventor in his field. His innovative patents continue to influence the industry and improve the accuracy of defect detection in semiconductor substrates.

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