The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 20, 2007
Satoshi Tomimatsu, Kokubunji, JP;
Hiroyasu Shichi, Tokyo, JP;
Noriyuki Kaneoka, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Koji Ishiguro, Hitachinaka, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Hiroyasu Shichi, Tokyo, JP;
Noriyuki Kaneoka, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Koji Ishiguro, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.