The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2009

Filed:

Jul. 18, 2007
Applicants:

Koji Ishiguro, Hitachinaka, JP;

Kaoru Umemura, Tokyo, JP;

Noriyuki Kaneoka, Hitachinaka, JP;

Inventors:

Koji Ishiguro, Hitachinaka, JP;

Kaoru Umemura, Tokyo, JP;

Noriyuki Kaneoka, Hitachinaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G08B 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam columnthat is connected to a vacuum vesseland irradiates a samplewith an ion beamof nonmetal ion species, a microsampling unithaving a probethat extracts a microsamplecut out from a sampleby the ion beam, a gas gunthat discharges a gas for bonding the microsampleand the probe, a pollution measuring beam columnA that is connected to the same vacuum vesselto which the ion beam columnis connected and irradiates an ion beam irradiation traces by the ion beam columnwith a pollution measuring beam, and a detectorthat detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam columnupon irradiation with the pollution measuring beam


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