The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Mar. 25, 2010
Hiroyasu Shichi, Tokyo, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Noriyuki Kaneoka, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Koji Ishiguro, Hitachinaka, JP;
Hiroyasu Shichi, Tokyo, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Noriyuki Kaneoka, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Koji Ishiguro, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.