The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Oct. 30, 2017
Hitachi High-tech Corporation, Tokyo, JP;
Kentaro Ohira, Tokyo, JP;
Masaki Hasegawa, Tokyo, JP;
Tomohiko Ogata, Tokyo, JP;
Katsunori Onuki, Tokyo, JP;
Noriyuki Kaneoka, Tokyo, JP;
Hitachi High-Tech Corporation, Tokyo, JP;
Abstract
It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substratefor evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentationsthat are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.