Tokyo, Japan

Katsunori Onuki

This inventor holds 12 USPTO granted patents and 2 published patent applications. Top assignees: Hitachi-High-Technologies Corporation, Hitachi High-Tech Corporation, Canon Kabushiki Kaisha. Active years: 2007-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsunori Onuki. Retrieved from https://idiyas.com/inventor/katsunori-onuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 83.3

Average Co-Inventor Count = 4.6

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Ibaraki, JP (2007)
  • Hitachi, JP (2014)
  • Tokyo, JP (2017 - 2022)

Company Filing History:


Years Active: 2007-2022

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12 patents (USPTO):Explore Patents

Title: Innovations of Katsunori Onuki

Introduction

Katsunori Onuki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of electron beam technology, holding a total of 12 patents. His work focuses on enhancing the performance and sensitivity of inspection devices used in semiconductor manufacturing.

Latest Patents

One of his latest patents is an electron beam device that features two columns, including an irradiation optical system and an imaging optical system. This device sharpens the photoelectron image used for adjusting the irradiation optical system. It includes an irradiation optical system that directs an electron beam onto a sample, a light irradiation unit that emits ultraviolet light, and a sample voltage control unit that applies a negative voltage to the sample. This setup allows for the inversion of the electron orbit before the beam reaches the sample. The imaging optical system captures a mirror electron image by forming an image of mirror electrons reflected due to the negative voltage. Additionally, the system incorporates a sensor to obtain the mirror electron image and a stray light suppression part to prevent light from the irradiation unit from reaching the sensor.

Another notable patent involves a semiconductor substrate designed for evaluating the defect detection sensitivity of inspection devices. This substrate features multiple indentations created by pressing an indenter into the semiconductor material. The mirror electron image of these indentations is acquired, allowing for the quantitative evaluation of defect detection sensitivity by calculating the defect detection rate.

Career Highlights

Katsunori Onuki has worked with notable companies such as Hitachi High-Technologies Corporation and Hitachi High-Tech Corporation. His experience in these organizations has contributed to his expertise in electron beam technology and semiconductor inspection.

Collaborations

He has collaborated with esteemed colleagues, including Masaki Hasegawa and Tomohiko Ogata, further enhancing his innovative work in the field.

Conclusion

Katsunori Onuki's contributions to electron beam technology and semiconductor inspection have established him as a leading inventor in his field. His patents reflect a commitment to advancing technology and improving defect detection methods in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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