Hitachi-High-Technologies Corporation

Hitachi High-Tech Corporation

Canon Kabushiki Kaisha

Katsunori Onuki

Masaki Hasegawa

Noriyuki Kaneoka

Tomohiko Ogata

Hisaya Murakoshi

Naomasa Suzuki

Yoshimasa Fukushima

Muneyuki Fukuda

Yasunari Sohda

Hajime Kawano

Masashi Fujita

Keiji Emoto

Hiroshi Tsuji

Shuichi Nakagawa

Hironori Ogawa

Masahiro Koyama

Motohiro Takahashi

Masaru Matsushima

Ichiro Tachibana

Tasuku Yano

Kouji Ishiguro

Nobuo Shibata

Masahiro Tsunoda

Seiichi Shindo

Kentaro Ohira

Tetsuya Niibori

Katsuya Aibara

Takaaki Nishimori

In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unitwhich irradiates the sample with light containing ultraviolet rays; a sample voltage control unitwhich applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensorwhich obtains a mirror electron image and a stray light suppression partwhich is provided between the sensor and the stageand which suppresses reaching the sensor of the light emitted from the light irradiation unit.

Electron beam device

It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substratefor evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentationsthat are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.

Semiconductor substrate for evaluation and method using same to evaluate defect detection sensitivity of inspection device

In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages. The image processing device generates a control signal for controlling the potential difference on the basis of the acquired signal, and optimizes defect contrast by controlling the reflection surface of the mirror electrons.

Charged particle beam device

A defect inspection device includes a sample support member, a negative voltage, an imaging element, an ultraviolet light source, a movement stage, and a control device. The control device controls the movement stage such that a portion of a linear part included in the image or a location on an extensional line of the linear part is positioned at a specific location in an irradiated region of the electron beam. The control device also repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.

Defect inspection method and defect inspection device

A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.

Charged particle beam apparatus, and method of adjusting charged particle beam apparatus

The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system. The charged particle beam device is provided with: a light source that emits light toward the object; and a control device that obtains, on the basis of detection charged particles generated according to irradiation of light emitted from the light source, a plurality of deflection signals which maintain a certain deflection state, and that selects or calculates, from the plurality of deflection signals or from relationship information produced from the plurality of deflection signals, a deflection signal that satisfies a predetermined condition.

Charged particle beam device and method for adjusting charged particle beam device

An object of the present invention is to provide a charged particle beam device that suppresses the influence of an external electromagnetic wave, even when a shielding member, such as a vacuum valve, is in the open state. To achieve the above object, a charged particle beam device including a vacuum chamber () having an opening () that surrounds a sample delivery path is proposed. The charged particle beam device includes a conductive material () surrounding the opening () for conduction between the vacuum chamber () and a conductive member () disposed on the atmosphere side. According to an embodiment of the present invention, it is possible to restrict an electromagnetic wave () from reaching the sample chamber via the delivery path.

Conductive interface system between vacuum chambers in a charged particle beam device

There is proposed a column supporting structure that includes a viscoelastic sheet, a supporting plate which holds the viscoelastic sheet, and a fixation portion which connects the supporting plate to each lens barrel. The viscoelastic sheet is disposed to extend in a plane perpendicular to one lens barrel or the other lens barrel.

Charged particle beam apparatus and vibration damper for charged particle beam apparatus

A scanning electron beam device having: a deflector () for deflecting an electron beam () emitted from an electron source (); an objective lens () for causing the electron beam to converge; a retarding electrode; a stage () for placing a wafer (); and a controller (); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

Scanning electron beam device with focus adjustment based on acceleration voltage and dimension measurement method using same

Disclosed is a smaller and lighter stage device which can be applied to a device such as a length measurement SEM for inspecting and/or evaluating a semiconductor, and in which the effect of a magnetic field on an electron beam can be reduced. Linear motorsare disposed on four sides of a baseto be distanced from an electron beam projection position (the center of the stage device), respectively. The basehas dimensions substantially equivalent to minimum dimensions determined by the size of a top tableand a movable stroke. Linear motor statorsare configured to have a 'C-shaped' structure whose opening faces outside of the stage device, respectively. Further, a movable table is coupled to the top table via linear guidescomposed of a nonmagnetic material or roller mechanisms composed of a nonmagnetic material.

Stage device

Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber () for disposing a sample () therein, a charged particle radiation optical lens tube () for irradiating the sample () with charged particle radiation (), ion pumps () for evacuating the charged particle radiation optical lens tube (), a frame () fixedly attached to the sample chamber (), the frame () facing one end of each of the ion pumps (), and vibration absorbers provided between the frame () and the one end of each of the ion pumps (), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet () sandwiched between metal plates ().

Charged particle radiation device

An exhaust apparatus for a differential exhaust mechanism having a labyrinth seal and a plurality of vacuum pockets includes a differential exhaust system for evacuating the vacuum pockets and an exhaust system for evacuating a chamber of exhaust gas. The differential exhaust system and the exhaust system are connected by control valves that can be opened and closed, enabling communication between the vacuum pockets and the interior of the chamber to be opened and closed (or connected and disconnected) as well. The valves are opened when a vacuum is being formed inside the chamber or when a malfunction occurs in the exhaust system, thus connecting the vacuum pockets and the chamber and preventing excessive pressure from building up on the hydrostatic bearing.

Growing community of inventors

Tokyo, Japan

Katsunori Onuki