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Norio Hirashita

USPTO Granted Patents = 12 (Patent Applications = 1)

Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 97(Granted Patents)

Location History:

Higashi-yamato, JP (2005 - 2010)
Tokyo, JP (1994 - 2012)

Company Filing History:

11 out of 4,979

Oki Electric Industry Co., Ltd.

1 out of 52,722

Kabushiki Kaisha Toshiba

Oki Semiconductor Co., Ltd.

where one patent can have more than one assignee

Years Active: 1994-2012

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8183643 - Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon plane (2012-05-22),

2. 7759228 - Semiconductor device and method of manufacturing the same (2010-07-20),

3. 7479682 - Structure of a field effect transistor having metallic silicide and manufacturing method thereof (2009-01-20),

4. 7244996 - Structure of a field effect transistor having metallic silicide and manufacturing method thereof (2007-07-17),

5. 7199030 - Method of manufacturing semiconductor device (2007-04-03),

6. 6861322 - Method of manufacturing a semiconductor device (2005-03-01),

7. 6750088 - SOI MOS field effect transistor and manufacturing method therefor (2004-06-15),

8. 6531743 - SOI MOS field effect transistor and manufacturing method therefor (2003-03-11),

9. 6274470 - Method for fabricating a semiconductor device having a metallic silicide layer (2001-08-14),

10. 6197601 - Method of correcting temperature of semiconductor substrate (2001-03-06),

11. 6037588 - Method for testing semiconductor device (2000-03-14),

12. 5288948 - Structure of a semiconductor chip having a conductive layer (1994-02-22),

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