The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Sep. 26, 2001
Applicants:
Takashi Ichimori, Tokyo, JP;
Norio Hirashita, Tokyo, JP;
Inventors:
Takashi Ichimori, Tokyo, JP;
Norio Hirashita, Tokyo, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/268 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes diffusion layers formed in a SOI layer under a side-wall, a channel formed between the diffusion layers, silicide layers sandwiching the diffusion layers wherein interface junctions between the diffusion layers and the silicide layers are () silicon planes.
Ichimori, Takashi. (2012). Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon plane (U.S. Patent No. 8183643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8183643
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile