The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Jun. 09, 2006
Naoharu Sugiyama, Yokohama, JP;
Norio Hirashita, Higashiyamato, JP;
Tsutomu Tezuka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device. In the method, a substrate is prepared, which includes a buried oxide film and a SiGe layer formed on the buried oxide film. Then, heat treatment is performed on the substrate at a temperature equal to or lower than a first temperature, to form a protective oxide film on a surface of the SiGe layer. Next, the substrate having the protective oxide film is heated in a non-oxidizing atmosphere to a second temperature higher than the first temperature. Further, heat treatment is performed on the substrate thus heated, in an oxidizing atmosphere at a temperature equal to or higher than the second temperature, to form oxide the SiGe layer, make the SiGe layer thinner and increasing Ge concentration in the SiGe layer, thus forming a SiGe layer having the increased Ge concentration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile