The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Feb. 09, 1998
Guo-Lin Liu, Tokyo, JP;
Hidetsugu Uchida, Tokyo, JP;
Izumi Aikawa, Tokyo, JP;
Naokatsu Ikegami, Tokyo, JP;
Norio Hirashita, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
In order to achieve a method for analyzing the compositional distribution of deposited film adhering to the internal surface of a contact hole having a diameter in the deep submicron order, primary ions 18 are radiated into the surface 12a of an insulating film 12 where the contact hole 14 is formed to generate secondary ions 20. The primary ions are radiated into the surface of the insulating film from a constant diagonal direction. Then, mass spectrometry is performed on the resulting secondary ions to detect the compositional distribution of the deposited film 16 formed at the internal surface of the contact hole. Thus, the compositional distribution of the deposited film is ascertained over the depth-wise direction of the contact hole.