The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
May. 28, 2003
Applicants:
Satoshi Ikeda, Tokyo, JP;
Yutaka Kamata, Miyagi, JP;
Ikuo Kurachi, Tokyo, JP;
Norio Hirashita, Tokyo, JP;
Inventors:
Satoshi Ikeda, Tokyo, JP;
Yutaka Kamata, Miyagi, JP;
Ikuo Kurachi, Tokyo, JP;
Norio Hirashita, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby produce heat treatment-based stress between the silicon nitride film and the silicon substrate.