The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
Apr. 05, 2001
Applicants:
Norio Hirashita, Tokyo, JP;
Takashi Ichimori, Tokyo, JP;
Inventors:
Norio Hirashita, Tokyo, JP;
Takashi Ichimori, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor having metallic silicide layers is formed in a semiconductor layer on an insulating layer of an SOI substrate. The metallic silicide layers are composed of refractory metal and silicon. The metallic silicide layers extend to bottom surfaces of a source and a drain regions. A ratio of the metal to the silicon in the metallic silicide layers is X to Y. A ratio of the metal to the silicon of metallic silicide having the lowest resistance among stoichiometaric metallic silicides is Xto Y. X, Y, Xand Ysatisfy the following inequity: (X/Y)>(X/Y).