IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Nobuyoshi Koshida

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 105(Granted Patents)


Location History:

  • Kodaira, JP (2001 - 2004)
  • Koganei-shi, Tokyo JP (2005)
  • Koganei-shi, Tokyo, JP (2006)
  • Koganei-shi, JP (2007)
  • Tokyo, JP (1999 - 2014)

Company Filing History:

goldMedal7 out of 1,623 
 
Matsushita Electric Works, Ltd.
 patents
silverMedal2 out of 25,530 
 
Sharp Kabushiki Kaisha Corporation
 patents
bronzeMedal2 out of 1,012 
 
National Research Council of Canada
 patents
4. 2 out of 27,394 
 
Hewlett-packard Development Company, L.p.
 patents
5. 2 out of 1,309 
 
Japan Science and Technology Agency
 patents
6. 1 out of 2,861 
 
Pioneer Electronic Corporation
 patents
7. 1 out of 256 
 
Anelva Corporation
 patents
8. 1 out of 1 
 
Nobuyoshi Koshida
 patent
9. 1 out of 16,453 
 
Panasonic Corporation
 patents
10. 1 out of 373 
 
Japan Science and Technology Corporation
 patents
11. 1 out of 10,295 
 
Tokyo Electron Limited
 patents
12. 1 out of 130 
 
Tokyo University of Agriculture and Technology
 patents
13. 3 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2014

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20 patents (USPTO):
1. 8653519 - Electronic device and method for manufacturing same (2014-02-18),
2. 8130593 - Pressure wave generator and temperature controlling method thereof (2012-03-06),
3. 7515851 - Electron emitter, charger, and charging method (2009-04-07),
4. 7307379 - Electron emitting element and image forming apparatus employing it (2007-12-11),
5. 7306990 - Information storage element, manufacturing method thereof, and memory array (2007-12-11),
6. 7119361 - Luminescence stabilization of anodically oxidized porous silicon layers (2006-10-10),
7. 7091138 - Forming method and a forming apparatus of nanocrystalline silicon structure (2006-08-15),
8. 7053422 - Solid-state self-emission display and its production method (2006-05-30),
9. 6940087 - Quantum device (2005-09-06),
10. 6939728 - Method of fabricating silicon emitter with a low porosity heavily doped contact layer (2005-09-06),
11. 6897604 - Method of generating ballistic electrons and ballistic electron solid semiconductor element and light emitting element and display device (2005-05-24),
12. 6814849 - Luminescence stabilization of anodically oxidized porous silicon layers (2004-11-09),
13. 6794805 - Field emission electron source, method of producing the same, and use of the same (2004-09-21),
14. 6791248 - Field emission electron source (2004-09-14),
15. 6771010 - Silicon emitter with low porosity heavily doped contact layer (2004-08-03),

Title: The Innovative Mind of Nobuyoshi Koshida

Introduction: Nobuyoshi Koshida is a pioneering inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nobuyoshi Koshida holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Koshida has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Nobuyoshi Koshida has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Nobuyoshi Koshida's relentless pursuit of innovation and his passion for creating cutting-edge technologies have solidified his reputation as a visionary inventor in the global tech community.

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