The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Mar. 07, 2003
Takuya Komoda, Sanda, JP;
Nobuyoshi Koshida, Koganei-shi, Tokyo 184-0003, JP;
Tsutomu Ichihara, Hirakata, JP;
Takuya Komoda, Sanda, JP;
Nobuyoshi Koshida, Koganei-shi, Tokyo 184-0003, JP;
Tsutomu Ichihara, Hirakata, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Other;
Abstract
Disclosed is an electron sourceincluding an electron source elementformed on the side of one surface of an insulative substrate. The electron source elementincludes a lower electrode, a composite nanocrystal layerand a surface electrode. The composite nanocrystal layerincludes a plurality of polycrystalline silicon grains, a thin silicon oxide filmformed over the surface of each of the grains, a number of nanocrystalline siliconsresiding between the adjacent grains, and a silicon oxide filmformed over the surface of each of the nanocrystalline silicons. The silicon oxide filmis an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon. The surface electrodeis formed of a carbon thin filmlaminated on the composite nanocrystal layerwhile being in contact therewith, and a metal thin filmlaminated on the carbon thin film