The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 10, 2001
Applicant:
Inventors:
David John Lockwood, Vanier, CA;
Rabah Boukherroub, Ottawa, CA;
Danial D. M. Wayner, Ottawa, CA;
Nobuyoshi Koshida, Tokyo, JP;
Assignee:
National Research Council, Ottawa, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 7/12 ;
U.S. Cl.
CPC ...
C25D 7/12 ;
Abstract
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.