This inventor holds 5 USPTO granted patents. Top assignee: National Research Council of Canada. Active years: 2004-2008.
Company Filing History:
Years Active: 2004-2008
Title: Danial D M Wayner: Innovator in Porous Silicon Technology
Introduction
Danial D M Wayner is a prominent inventor based in Ottawa, Canada. He has made significant contributions to the field of semiconductor technology, particularly in the stabilization of porous silicon structures. With a total of 5 patents to his name, Wayner's work has garnered attention for its innovative approaches and practical applications.
Latest Patents
Wayner's latest patents include groundbreaking methods for enhancing the stability of porous silicon. One notable patent is focused on the passivation of porous semiconductors. This method involves stabilizing porous silicon by subjecting it to organic thermal processing, which replaces hydrogen atoms on the surface with a protective organic layer. The resulting structures exhibit unprecedented stability, making them highly valuable in various applications. Another significant patent addresses the luminescence stabilization of anodically oxidized porous silicon layers. This process stabilizes the porous silicon structure by anodically oxidizing it and then chemically functionalizing the surface regions. The creation of a protective organic monolayer enhances the stability of the structure, further advancing the field.
Career Highlights
Danial D M Wayner is affiliated with the National Research Council of Canada, where he continues to push the boundaries of semiconductor research. His innovative work has not only contributed to academic knowledge but has also paved the way for practical applications in technology and industry.
Collaborations
Wayner has collaborated with notable colleagues in his field, including Rabah Boukherroub and David John Lockwood. These collaborations have enriched his research and expanded the impact of his inventions.
Conclusion
Danial D M Wayner stands out as a key figure in the advancement of porous silicon technology. His innovative patents and contributions to the National Research Council of Canada highlight his commitment to enhancing semiconductor stability. His work continues to influence the field and inspire future innovations.