The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7119361 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 10, 2006

Filed:

Oct. 25, 2004
Applicants:

David John Lockwood, Vanier, CA;

Rabah Boukherroub, Ottawa, CA;

Danial D. M. Wayner, Ottawa, CA;

Nobuyoshi Koshida, Tokyo, JP;

Inventors:

David John Lockwood, Vanier, CA;

Rabah Boukherroub, Ottawa, CA;

Danial D. M. Wayner, Ottawa, CA;

Nobuyoshi Koshida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.


Find Patent Forward Citations

Lockwood, David. (2006). Luminescence stabilization of anodically oxidized porous silicon layers (U.S. Patent No. 7119361). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7119361

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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