The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Apr. 23, 2004
Applicants:
Rabah Boukherroub, Ottawa, CA;
Danial D. M. Wayner, Ottawa, CA;
David J. Lockwood, Vanier, CA;
Sylvie Morin, Toronto, CA;
Inventors:
Rabah Boukherroub, Ottawa, CA;
Danial D. M. Wayner, Ottawa, CA;
David J. Lockwood, Vanier, CA;
Sylvie Morin, Toronto, CA;
Assignee:
National Research Council of Canada, Ottawa, ON, CA;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.