Matsushita Electric Works, Ltd.

Other

Hewlett-Packard Development Company, L.p.

Sharp Kabushiki Kaisha Corporation

Japan Science and Technology Agency

National Research Council of Canada

Panasonic Corporation

Tokyo Electron Limited

Pioneer Electronic Corporation

Japan Science and Technology Corporation

Anelva Corporation

Tokyo University of Agriculture and Technology

Nobuyoshi Koshida

Tsutomu Ichihara

Takuya Komoda

Koichi Aizawa

Yoshiaki Honda

Yoshifumi Watabe

Takashi Hatai

Yukihiro Kondo

Tadashi Iwamatsu

Hiroyuki Hirakawa

Masahiko Ando

Shunri Oda

Toshikazu Shimada

Xia Sheng

Huei-Pei Kuo

David John Lockwood

Rabah Boukherroub

Danial D M Wayner

Natsuki Yokoyama

Takamasa Yoshikawa

Kiyohide Ogasawara

Masato Hayashi

Masami Yakabe

Kenji Tsubaki

Masao Kubo

Yoichiro Numasawa

Shinya Yamaguchi

Naomasa Oka

Masatoshi Shiiki

The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Electronic device and method for manufacturing same

A pressure wave generator () includes a thermally conductive substrate (), a heat insulating layer () formed on one main surface of the substrate (), an insulator layer () formed on the heat insulating layer (), and a heat generator () formed on the insulator layer () to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer () is formed containing at least one of silicon nitride (SiN), silicon dioxide (SiO), aluminum oxide (AlO), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator () is formed containing, for example, gold (Au) or tungsten (W).

Pressure wave generator and temperature controlling method thereof

Provided are an electron emitter continuously emitting electrons stably even in the atmosphere, a charger using the electron emitter, and a charging method using the charger. The electron emitter includes a electron emitting element consisting of a first electrode, a second electrode, and a semiconductor layer formed therebetween, and a power supply for alternately applying a positive voltage enabling electron emission and a negative voltage having a polarity opposite to the positive voltage. At least a part of the surface on the first electrode side of the semiconductor layer is formed of a porous semiconductor layer. Electrons captured in the porous semiconductor layer in the course of electron emission with application of a positive voltage disturb electron emission from the electron emitting element. Such electrons, however, are removed by application of a negative voltage.

Electron emitter, charger, and charging method

An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.

Electron emitting element and image forming apparatus employing it

An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (), and a floating gate layer () having two stable deflection states in the cavity (), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate () side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer () by Coulomb interactive force between the electrons (or positive holes) accumulated in the floating gate layer () and external electric field, and by reading the channel current change based on the state of the floating gate layer ().

Information storage element, manufacturing method thereof, and memory array

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Luminescence stabilization of anodically oxidized porous silicon layers

A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.

Forming method and a forming apparatus of nanocrystalline silicon structure

The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost. Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator () of nm size and fluorescent fine particles () of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer () not being scattered by phonons to become high energy ballistic electrons, and form excitons () by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.

Solid-state self-emission display and its production method

A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

Method of fabricating silicon emitter with a low porosity heavily doped contact layer

Disclosed is an electron sourceincluding an electron source elementformed on the side of one surface of an insulative substrate. The electron source elementincludes a lower electrode, a composite nanocrystal layerand a surface electrode. The composite nanocrystal layerincludes a plurality of polycrystalline silicon grains, a thin silicon oxide filmformed over the surface of each of the grains, a number of nanocrystalline siliconsresiding between the adjacent grains, and a silicon oxide filmformed over the surface of each of the nanocrystalline silicons. The silicon oxide filmis an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon. The surface electrodeis formed of a carbon thin filmlaminated on the composite nanocrystal layerwhile being in contact therewith, and a metal thin filmlaminated on the carbon thin film

Quantum device

A method of generating ballistic electrons with a high controllability by applying an electric field to a nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or quasiballistic electrons by a multiple-tunnel effect; and a semiconductor device used in this method and provided with a practical material constitution.

Method of generating ballistic electrons and ballistic electron solid semiconductor element and light emitting element and display device

An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source comprises an electrically conductive substrate of p-type silicon substrate ; n-type regions of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers formed on the n-type regions which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region ; poly-silicon layers between the strong field drift layers ; surface electrodes of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer and the poly-silicon layers . By selecting a pair of the n-type regions and the surface electrodes and thereby making electron emitted from the crossing points due to combination of the surface electrode to be electrically applied and the n-type region to be electrically applied, electrons can be discharged from desired regions of the surface electrodes

Field emission electron source, method of producing the same, and use of the same

There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode made of a gold thin film is formed on the strong electric field drift part . And the ohmic electrode is formed on the back surface of the n-type silicon substrate . In this field emission electron source , when the surface electrode is disposed in the vacuum and a DC voltage is applied to the surface electrode which is of a positive polarity with respect to the n-type silicon substrate (ohmic electrode ), electrons injected from the n-type silicon substrate are drifted in the strong electric field drift part and emitted through the surface electrode . The strong electric field drift part comprises a drift region which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate , which is an electrically conductive substrate, and a heat radiation region which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region

Field emission electron source

A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n&plus; semiconductor, n&plus; single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

Growing community of inventors

Tokyo, Japan

Nobuyoshi Koshida