The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Mar. 26, 2001
Applicant:
Nobuyoshi Koshida, Tokyo, JP;
Inventor:
Nobuyoshi Koshida, Tokyo, JP;
Assignee:
Japan Science and Technology Corporation, Saitama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract
A method of generating ballistic electrons with a high controllability by applying an electric field to a nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or quasiballistic electrons by a multiple-tunnel effect; and a semiconductor device used in this method and provided with a practical material constitution.