The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2007

Filed:

Apr. 13, 2004
Applicants:

Tadashi Iwamatsu, Nara, JP;

Hiroyuki Hirakawa, Nara, JP;

Nobuyoshi Koshida, Koganei-shi, JP;

Inventors:

Tadashi Iwamatsu, Nara, JP;

Hiroyuki Hirakawa, Nara, JP;

Nobuyoshi Koshida, Koganei-shi, JP;

Assignees:

Sharp Kabushiki Kaisha, Osaka, JP;

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.


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