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Niti Goel

This inventor holds 35 USPTO granted patents and 3 published patent applications and 6 EPO patents, primarily in Epitaxial Growth. Top assignees: Intel Corporation, Other. Active years: 2011-2020.

USPTO Granted Patents = 35 (Patent Applications = 3)

% Patents Active = 68.6

EPO Patents = 6 (Patent Applications = 13)

Average Co-Inventor Count = 7.9

ph-index = 8

Forward Citations = 164(Granted Patents)

Location History:

Hillsboro, OR (US) (2017)
Austin, TX (US) (2011 - 2018)
Portland, OR (US) (2014 - 2020)

Company Filing History:

34 out of 56,240

Intel Corporation

patents

1 out of 834,411

Other

patents

Years Active: 2011-2020

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Areas of Expertise:

Epitaxial Growth

III-V Materials

Defect Management

Semiconductor Devices

Lateral Epitaxy

Heterogeneous Integration

Non-Silicon Devices

Trench Confined Structures

Doping Concentration

Self-Aligned Structures

CMOS Technology

Conductivity Improvements

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10693008 - Cladding layer epitaxy via template engineering for heterogeneous integration on silicon (2020-06-23),

2. 10573717 - Selective epitaxially grown III-V materials based devices (2020-02-25),

3. 10475706 - Making a defect free fin based device in lateral epitaxy overgrowth region (2019-11-12),

4. 10268122 - Techniques to achieve area reduction through co-optimizing logic core blocks and memory redundancies (2019-04-23),

5. 10249490 - Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy (2019-04-02),

6. 10217732 - Techniques for forming a compacted array of functional cells (2019-02-26),

7. 10181518 - Selective epitaxially grown III-V materials based devices (2019-01-15),

8. 10096474 - Methods and structures to prevent sidewall defects during selective epitaxy (2018-10-09),

9. 10026686 - Decoupling capacitors and arrangements (2018-07-17),

10. 9923087 - Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation (2018-03-20),

11. 9905651 - GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation (2018-02-27),

12. 9899505 - Conductivity improvements for III-V semiconductor devices (2018-02-20),

13. 9865684 - Nanoscale structure with epitaxial film having a recessed bottom portion (2018-01-09),

14. 9711591 - Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby (2017-07-18),

15. 9698013 - Methods and structures to prevent sidewall defects during selective epitaxy (2017-07-04),

Title: Niti Goel: A Pioneer in Semiconductor Innovations

Introduction

Niti Goel, based in Portland, OR, has made remarkable contributions to the field of semiconductor technology through his innovative inventions. With an impressive portfolio of 35 patents, Goel continues to push the boundaries of what is possible in electronics and materials science.

Latest Patents

Among his most recent patents, Goel has developed a unique method for cladding layer epitaxy via template engineering for heterogeneous integration on silicon. This invention involves an apparatus that includes a semiconductor body with a channel region and junction regions, along with a plurality of nanowires made from a different material. The apparatus aims to enhance semiconductor performance through advanced design. Another notable patent focuses on selective epitaxially grown III-V materials for devices. This technology includes a sophisticated layering process of III-V material-based buffer layers, which improves device efficiency and performance.

Career Highlights

Goel has significantly contributed to leading organizations, including Intel Corporation, where he further honed his expertise in semiconductor technologies. His vast experience in the industry has played a pivotal role in the successful development and patenting of cutting-edge technological advancements.

Collaborations

In his journey, Niti Goel has collaborated with talented individuals such as Niloy Mukherjee and Jack T Kavalieros. These partnerships have facilitated knowledge exchange and fostered innovation in their shared projects, pushing forward their contributions to the field.

Conclusion

Niti Goel's impressive array of patents and collaborative efforts position him as a prominent figure in semiconductor innovation. His work continues to inspire the next generation of inventors and researchers in the technology domain. With ongoing advancements, the future looks promising for Niti Goel and the impact of his inventions on the industry.

Profile summary based on public USPTO records.

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