The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Sep. 27, 2013
Intel Corporation, Santa Clara, CA (US);
Niloy Mukherjee, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Niti Goel, Portland, OR (US);
Van H. Le, Portland, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Benjamin Chu-Kung, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An apparatus including a semiconductor body including a channel region and junction regions disposed on opposite sides of the channel region, the semiconductor body including a first material including a first band gap; and a plurality of nanowires including a second material including a second band gap different than the first band gap, the plurality of nanowires disposed in separate planes extending through the first material so that the first material surrounds each of the plurality of nanowires; and a gate stack disposed on the channel region. A method including forming a plurality of nanowires in separate planes above a substrate, each of the plurality of nanowires including a material including a first band gap; individually forming a cladding material around each of the plurality of nanowires, the cladding material including a second band gap; coalescing the cladding material; and disposing a gate stack on the cladding material.