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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Nadia M Rahhal-Orabi

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 201(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2008 - 2023)
  • Lake Oswego, OR (US) (2018 - 2023)

Company Filing History:

goldMedal28 out of 54,780 
 
Intel Corporation
 patents

Years Active: 2008-2023

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28 patents (USPTO):Explore Patents
1. 11631737 - Ingaas epi structure and wet etch process for enabling III-v GAA in art trench (2023-04-18),
2. 11600524 - Self-aligned contacts (2023-03-07),
3. 11205707 - Optimizing gate profile for performance and gate fill (2021-12-21),
4. 10930557 - Self-aligned contacts (2021-02-23),
5. 10797150 - Differential work function between gate stack metals to reduce parasitic capacitance (2020-10-06),
6. 10629483 - Self-aligned contacts (2020-04-21),
7. 10580865 - Transistor with a sub-fin dielectric region under a gate (2020-03-03),
8. 10461082 - Well-based integration of heteroepitaxial N-type transistors with P-type transistors (2019-10-29),
9. 10431690 - High electron mobility transistors with localized sub-fin isolation (2019-10-01),
10. 10141226 - Self-aligned contacts (2018-11-27),
11. 9935205 - Internal spacers for nanowire transistors and method of fabrication thereof (2018-04-03),
12. 9929273 - Apparatus and methods of forming fin structures with asymmetric profile (2018-03-27),
13. 9916988 - Sacrificial material for stripping masking layers (2018-03-13),
14. 9892967 - Self-aligned contacts (2018-02-13),
15. 9508821 - Self-aligned contacts (2016-11-29),

Title: Innovator Spotlight: Nadia M Rahhal-Orabi, Pioneering Microelectronics Engineer

Introduction:

Nadia M Rahhal-Orabi, a talented inventor and microelectronics engineer, hails from Hillsboro, Oregon, in the United States. With 28 patents to her name, she has made significant contributions to the field of microelectronics, particularly in the development of innovative transistor structures.

Latest Patents:

Among Nadia M Rahhal-Orabi's latest patents is the "InGaAs epi structure and wet etch process for enabling III-V GAA in art trench." This groundbreaking invention focuses on nanowire and nanoribbon transistors, offering new methods for their formation. One embodiment involves the formation of a multi-layer stack within a trench in a shallow trench isolation (STI) layer, comprising a channel layer, a release layer, and a buffer layer. Another patent involves "self-aligned contacts," which prevent short circuits between the gate electrode and contact, allowing for more robust and precise patterning of wider contacts.

Career Highlights:

Nadia M Rahhal-Orabi is a key figure at Intel Corporation, a leading semiconductor company, where she plays a pivotal role in advancing microelectronic technologies. Her expertise and innovative spirit have led to the successful development of cutting-edge transistor structures, paving the way for enhanced performance and efficiency in semiconductor devices.

Collaborations:

Within Intel Corporation, Nadia M Rahhal-Orabi collaborates closely with esteemed colleagues such as Tahir Ghani and Mark T Bohr. Together, they form a dynamic team driving innovation and pushing the boundaries of microelectronics engineering.

Conclusion:

In conclusion, Nadia M Rahhal-Orabi's impactful work in the field of microelectronics underscores her position as a pioneering inventor and engineer. Her patents reflect a commitment to innovation and excellence, ultimately shaping the future of semiconductor technology. With a strong focus on transistor structures and self-aligned contacts, she continues to drive advancements in the industry, solidifying her legacy as a trailblazer in microelectronics.

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