Wyomissing, PA, United States of America

Muhammed Ayman Shibib

This inventor holds 42 USPTO granted patents, primarily in Metal-Oxide Semiconductor. Top assignees: Agere Systems Inc., Lucent Technologies Inc., At+t Corp.. Active years: 1986-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Muhammed Ayman Shibib. Retrieved from https://idiyas.com/inventor/muhammed-ayman-shibib

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 88.1

Average Co-Inventor Count = 1.4

ph-index = 11

Forward Citations = 459(Granted Patents)


Location History:

  • Wyomissing Hills, PA (US) (1986 - 2001)
  • Wyomissing, PA (US) (1997 - 2014)

Company Filing History:


Years Active: 1986-2014

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Areas of Expertise:
Metal-Oxide Semiconductor
Electrostatic Discharge Protection
Device Reliability
High Voltage Termination
Dual-Gate Device
Hot Carrier Injection
Thermal Shutdown
Strained Silicon
Complementary Devices
P-Channel MOS
Lateral High-Voltage
DMOS Device
42 patents (USPTO):Explore Patents

Title: **The Innovations of Muhammed Ayman Shibib: A Pioneer in MOS Device Technology**

Introduction

Muhammed Ayman Shibib is a prominent inventor based in Wyomissing, PA. With an impressive portfolio of 42 patents, his contributions to the field of semiconductor devices have paved the way for advancements in technology. His innovations reflect a deep understanding of material properties and electronic design, enhancing the efficiency and functionality of devices used in everyday applications.

Latest Patents

One of Shibib's latest advancements includes a patent for a metal-oxide-semiconductor (MOS) device featuring a trenched diffusion region along with a method for forming the same. This MOS device incorporates a semiconductor layer of a first conductivity type, with first and second source/drain regions of a second conductivity type situated in close proximity to the layer's upper surface. Notably, the structure permits the first and second source/drain regions to be spatially distinct from each other, allowing for innovative design and efficiency. Additionally, the configuration of the source/drain regions enhances their effective widths, thus improving the overall device performance.

Career Highlights

Throughout his career, Muhammed Ayman Shibib has made significant strides in the technology sector. He has held positions in esteemed organizations such as Agere Systems Inc. and Lucent Technologies Inc. These tenure experiences have allowed him to collaborate on crucial projects that pushed the boundaries of semiconductor advancements and contributed to his impressive patent portfolio.

Collaborations

Shibib has worked alongside notable professionals in the field, including Shuming Xu and Zhijian Xie. Their collaborations have fostered an environment of innovation and have led to the successful development of new technologies in semiconductor devices. Together, they have explored various techniques and methodologies that continue to influence the design of electronic components.

Conclusion

Muhammed Ayman Shibib's contributions to semiconductor technology, particularly in the development of metal-oxide-semiconductor devices, underline his importance as an inventor. His extensive array of patents demonstrates not only his innovative spirit but also his commitment to improving electronic device efficiency. As technology continues to evolve, Shibib's work will undoubtedly leave a lasting impact on the industry, inspiring future inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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