The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Dec. 04, 2007
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
An MOS device includes a semiconductor layer of a first conductivity type and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The first and second source/drain regions are spaced apart relative to one another. A gate is formed above and electrically isolated from the semiconductor layer, at least partially between the first and second source/drain regions. At least a given one of the first and second source/drain regions is configured having an effective width that is substantially greater than a width of a junction between the semiconductor layer and the given source/drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile