The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Sep. 29, 2004
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method of forming an oxide region in a semiconductor device includes the steps of forming a plurality of trenches in a semiconductor layer of the device, the trenches being formed in close relative proximity to one another, and oxidizing the semiconductor layer such that an insulating layer is formed on at least sidewalls and bottom walls of the trenches. The trenches are configured such that the insulating layer formed as a result of the oxidizing step substantially fills the trenches and substantially consumes the semiconductor layer between corresponding pairs of adjacent trenches. In this manner, a substantially continuous oxide region is formed throughout the plurality of trenches.