The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Sep. 29, 2003
Frank A. Baiocchi, Allentown, PA (US);
Bailey R. Jones, Mohnton, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Frank A. Baiocchi, Allentown, PA (US);
Bailey R. Jones, Mohnton, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Ciclon Semiconductor Device Corp., Bethleham, PA (US);
Abstract
An MOS device is formed including a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one contact, the at least one contact including a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate. The contact further includes at least one insulating layer formed directly on the silicide layer.