The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Nov. 30, 2004
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
An MOS device includes first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A non-uniformly doped channel region of the first conductivity type is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on the upper surface of the semiconductor layer. A first gate is formed on the insulating layer at least partially between the first and second source/drain regions and above at least a portion of the channel region, and at least a second gate formed on the insulating layer above at least a portion of the channel region and between the first gate and the second source/drain region. The second gate has a length which is substantially greater than a length of the first gate, the first and second gates being electrically isolated from one another.