The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Mar. 23, 2012
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Muhammed Ayman Shibib, Wyomissing, PA (US);
Shuming Xu, Schnecksville, PA (US);
Agere Systems LLC, Allentown, PA (US);
Abstract
An MOS device includes a semiconductor layer of a first conductivity type and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The first and second source/drain regions are spaced apart relative to one another. A gate is formed above and electrically isolated from the semiconductor layer, at least partially between the first and second source/drain regions. At least a given one of the first and second source/drain regions is configured having an effective width that is substantially greater than a width of a junction between the semiconductor layer and the given source/drain region.