Moo-Sung Kim

This inventor holds 29 USPTO granted patents and 3 published patent applications and 10 EPO patents, primarily in Thin Film Deposition. Top assignees: Versum Materials US, LLC, Air Products and Chemicals, Inc., Samsung Electronics Co., Ltd.. Active years: 2005-2024.

USPTO Granted Patents = 29 (Patent Applications = 3)

% Patents Active = 82.8

EPO Patents = 10 (Patent Applications = 11)

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 35(Granted Patents)

Location History:

Kyungju, KR (2005)
Seongnam, KR (2012 - 2013)
Sungnam, KR (2012 - 2015)
Hwaseong-si, KR (2021)
Ansan, KR (2021)
Tempe, AZ (US) (2022)
Gyeonggi-do, KR (2007 - 2023)
Gyunggi-Do, KR (2014 - 2023)
Ansan-Si, KR (2021 - 2023)

Company Filing History:

17 out of 222

Versum Materials US, LLC

patents

7 out of 3,219

Air Products and Chemicals, Inc.

patents

3 out of 132,108

Samsung Electronics Co., Ltd.

The University of Texas System

patents

where one patent can have more than one assignee

Years Active: 2005-2024

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Areas of Expertise:

Silicon Nitride Films

Hafnium Oxide

Boron-Containing Compounds

Ferroelectric Materials

CVD

ALD

Memory Devices

Metal Precursors

Strontium Titanate

Carbon Doped Silicon

Multicomponent Films

Group IV Metals

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12163224 - Methods for depositing a conformal metal or metalloid silicon nitride film (2024-12-10),

2. 11742200 - Composition and methods using same for carbon doped silicon containing films (2023-08-29),

3. 11732351 - Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films (2023-08-22),

4. 11631580 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2023-04-18),

5. 11605535 - Boron-containing compounds, compositions, and methods for the deposition of a boron containing films (2023-03-14),

6. 11440929 - Bis(diazadiene)cobalt compounds, method of making and method of use thereof (2022-09-13),

7. 11193206 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2021-12-07),

8. 11152206 - Compositions and methods using same for carbon doped silicon containing films (2021-10-19),

9. 11104990 - Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films (2021-08-31),

10. 11081337 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2021-08-03),

11. 11035039 - Compositions and methods for depositing silicon nitride films (2021-06-15),

12. 11017853 - Cross point resistive memory device with compensation for leakage current in read operation (2021-05-25),

13. 10985010 - Methods for making silicon and nitrogen containing films (2021-04-20),

14. 10763103 - Boron-containing compounds, compositions, and methods for the deposition of a boron containing films (2020-09-01),

15. 10745808 - Methods for depositing Group 13 metal or metalloid nitride films (2020-08-18),

Title: The Innovative Journey of Moo-Sung Kim

Introduction: Moo-Sung Kim, a talented inventor hailing from Gyunggi-do, South Korea, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Moo-Sung Kim holds several patents in the areas of electronics and telecommunications, showcasing his expertise and creativity in developing cutting-edge solutions for modern challenges.

Career Highlights: Throughout his career, Moo-Sung Kim has worked tirelessly to push the boundaries of technological advancements, earning recognition for his innovative ideas and problem-solving skills.

Collaborations: Moo-Sung Kim has collaborated with various research institutions and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Moo-Sung Kim's passion for innovation and his dedication to creating impactful solutions have solidified his reputation as a pioneering inventor in the tech industry.