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For the Inventor, By the Inventor

Gyunggi-do, South Korea

Moo-Sung Kim

USPTO Granted Patents = 29 

 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • Kyungju, KR (2005)
  • Seongnam, KR (2012 - 2013)
  • Sungnam, KR (2012 - 2015)
  • Hwaseong-si, KR (2021)
  • Ansan, KR (2021)
  • Tempe, AZ (US) (2022)
  • Gyeonggi-do, KR (2007 - 2023)
  • Gyunggi-Do, KR (2014 - 2023)
  • Ansan-Si, KR (2021 - 2023)

Company Filing History:

goldMedal17 out of 200 
 
Versum Materials Us, LLC
 patents
silverMedal7 out of 3,189 
 
Air Products and Chemicals, Inc.
 patents
bronzeMedal3 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
4. 2 out of 726 
 
Intermolecular, Inc.
 patents
5. 1 out of 5,450 
 
The University of Texas System
 patents
where one patent can have more than one assignee

Years Active: 2005-2024

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29 patents (USPTO):Explore Patents
1. 12163224 - Methods for depositing a conformal metal or metalloid silicon nitride film (2024-12-10),
2. 11742200 - Composition and methods using same for carbon doped silicon containing films (2023-08-29),
3. 11732351 - Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films (2023-08-22),
4. 11631580 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2023-04-18),
5. 11605535 - Boron-containing compounds, compositions, and methods for the deposition of a boron containing films (2023-03-14),
6. 11440929 - Bis(diazadiene)cobalt compounds, method of making and method of use thereof (2022-09-13),
7. 11193206 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2021-12-07),
8. 11152206 - Compositions and methods using same for carbon doped silicon containing films (2021-10-19),
9. 11104990 - Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films (2021-08-31),
10. 11081337 - Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials (2021-08-03),
11. 11035039 - Compositions and methods for depositing silicon nitride films (2021-06-15),
12. 11017853 - Cross point resistive memory device with compensation for leakage current in read operation (2021-05-25),
13. 10985010 - Methods for making silicon and nitrogen containing films (2021-04-20),
14. 10763103 - Boron-containing compounds, compositions, and methods for the deposition of a boron containing films (2020-09-01),
15. 10745808 - Methods for depositing Group 13 metal or metalloid nitride films (2020-08-18),

Title: The Innovative Journey of Moo-Sung Kim

Introduction: Moo-Sung Kim, a talented inventor hailing from Gyunggi-do, South Korea, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Moo-Sung Kim holds several patents in the areas of electronics and telecommunications, showcasing his expertise and creativity in developing cutting-edge solutions for modern challenges.

Career Highlights: Throughout his career, Moo-Sung Kim has worked tirelessly to push the boundaries of technological advancements, earning recognition for his innovative ideas and problem-solving skills.

Collaborations: Moo-Sung Kim has collaborated with various research institutions and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Moo-Sung Kim's passion for innovation and his dedication to creating impactful solutions have solidified his reputation as a pioneering inventor in the tech industry.

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