The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Oct. 06, 2016
Versum Materials Us, Llc, Tempe, AZ (US);
Board of Regents, the University of Texas System, Austin, TX (US);
Xinjian Lei, Carlsbad, CA (US);
Moo-Sung Kim, Ansan-Si, KR;
Anupama Mallikarjunan, Carlsbad, CA (US);
Aaron Michael Dangerfield, Plano, TX (US);
Luis Fabián Peña, Richardson, TX (US);
Yves Jean Chabal, Richardson, TX (US);
VERSUM MATERIALS US, LLC, Tempe, AZ (US);
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US);
Abstract
Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.