The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Jul. 28, 2016
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Xinjian Lei, Vista, CA (US);

Moo-Sung Kim, Gyunggi-Do, KR;

Manchao Xiao, San Diego, CA (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/345 (2013.01); C23C 16/45542 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01);
Abstract

Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm.


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