The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jan. 22, 2020
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Haripin Chandra, San Marcos, CA (US);
Xinjian Lei, Vista, CA (US);
Anupama Mallikarjunan, Taipei III, TW;
Moo-Sung Kim, Gyunggi-do, KR;
Assignee:
Versum Materials US, LLC, Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02208 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01);
Abstract
A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.