The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Aug. 26, 2021
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Xinjian Lei, Carlsbad, CA (US);

Moo-Sung Kim, Ansan-Si, KR;

Jianheng Li, Santa Clara, CA (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/303 (2013.01); C23C 16/36 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01);
Abstract

Described herein are conformal films and methods for forming a conformal metal or metalloid doped silicon nitride dielectric film wherein the conformal metal is zirconium, hafnium, titanium, tantalum, or tungsten. A method includes providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated; and optionally purge the reactor with an inert gas; and the steps are repeated until a desired thickness of the conformal metal nitride film is obtained.


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