The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Jul. 14, 2021
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Xinjian Lei, Vista, CA (US);

Matthew R. MacDonald, Laguna Niguel, CA (US);

Moo-Sung Kim, Gyeonggi-do, KR;

Se-Won Lee, Gyeonggi-do, KR;

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); C09D 5/24 (2006.01); C09D 1/00 (2006.01); H01L 49/02 (2006.01); H01L 27/11507 (2017.01); C09D 7/40 (2018.01);
U.S. Cl.
CPC ...
H01L 21/02148 (2013.01); C09D 1/00 (2013.01); C09D 5/24 (2013.01); C23C 16/401 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45531 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/50 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); C09D 7/40 (2018.01); H01L 27/11507 (2013.01); H01L 28/40 (2013.01);
Abstract

In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.


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