Tsukuba, Japan

Mitsuo Okamoto

This inventor holds 17 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Silicon Carbide Semiconductors. Top assignees: National Institute of Advanced Industrial Science and Technology, Fuji Electric Co., Ltd., Sanyo Electric Co., Ltd.. Active years: 2007-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuo Okamoto. Retrieved from https://idiyas.com/inventor/mitsuo-okamoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 64.7


Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • Ibaraki, JP (2007 - 2015)
  • Tsukuba, JP (2011 - 2020)

Company Filing History:


Years Active: 2007-2026

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Manufacturing Method
Field Effect Transistor
MOS Transistor
Recessed Gate
Schottky Diode
Production Method
Transistor Fabrication
Silicon Carbide Apparatus
Device Production
Device Manufacturing
17 patents (USPTO):Explore Patents

Title: Unveiling the Innovations of Mitsuo Okamoto: Leading the Way in Semiconductor Device Manufacturing

Introduction:

Mitsuo Okamoto is a distinguished inventor hailing from Tsukuba, Japan, whose groundbreaking work in the field of semiconductor devices has garnered widespread acclaim. With an impressive portfolio of 16 patents, Okamoto-san continues to push the boundaries of technology and revolutionize the industry.

Latest Patents:

Among his latest patents is the 'Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device,' detailing a meticulous process involving the deposition of silicon nitride and silicon oxide films on a silicon carbide semiconductor base. By enhancing the interface properties, Okamoto-san's method significantly improves the performance and reliability of semiconductor devices.

Another notable patent is the innovative technique for forming an ohmic electrode on the back surface of an n-type SiC substrate. By carefully controlling the impurity concentration and implantation energy, Okamoto-san ensures the creation of a high-quality back surface electrode with enhanced properties.

Career Highlights:

Throughout his illustrious career, Mitsuo Okamoto has made significant contributions to renowned organizations such as the National Institute of Advanced Industrial Science and Technology and Fuji Electric Co., Ltd. His expertise and innovative approach have played a pivotal role in advancing the semiconductor industry and shaping its future.

Collaborations:

Collaborating with esteemed colleagues like Kenji Fukuda and Shinsuke Harada, Okamoto-san has fostered a culture of innovation and excellence. Together, they have worked tirelessly to develop cutting-edge technologies and bring visionary ideas to life.

Conclusion:

In conclusion, Mitsuo Okamoto stands as a trailblazer in the realm of semiconductor device manufacturing, leaving an indelible mark on the industry. His passion for innovation, coupled with his relentless pursuit of excellence, continues to inspire future generations of inventors and engineers. The transformative impact of his work reinforces his status as a true visionary in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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