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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103059 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Jul. 28, 2016

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Applicants:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Yoshiyuki Sugahara, Nagano, JP;

Takashi Tsutsumi, Matsumoto, JP;

Youichi Makifuchi, Tachikawa, JP;

Tsuyoshi Araoka, Tsukuba, JP;

Kenji Fukuda, Tsukuba, JP;

Shinsuke Harada, Tsukuba, JP;

Mitsuo Okamoto, Tsukuba, JP;

Assignees:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Joseph C Nicely

Assistant Examiner:

Lamont Koo

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/045 (2013.01); H01L 21/049 (2013.01); H01L 21/28 (2013.01); H01L 21/76846 (2013.01); H01L 23/53223 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 21/0485 (2013.01);
Abstract

A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.

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